| PART |
Description |
Maker |
| 24AA32_04 24AA32 24AA32-_P 24AA32T-_P 24AA32T-_SM |
32K 1.8V I2C⑩ Smart Serial⑩ EEPROM
32K 1.8V I2C Smart Serial EEPROM
|
MICROCHIP[Microchip Technology]
|
| GS81032AT-150I GS81032AT-138I GS81032AT-133I GS810 |
18ns 66MHz 32K x 32 1Mb synchronous burst SRAM
12ns 100MHz 32K x 32 1Mb synchronous burst SRAM
10ns 133MHz 32K x 32 1Mb synchronous burst SRAM
9.7ns 138MHz 32K x 32 1Mb synchronous burst SRAM
11ns 117MHz 32K x 32 1Mb synchronous burst SRAM
9ns 150MHz 32K x 32 1Mb synchronous burst SRAM
32K x 32 1M Synchronous Burst SRAM 32K X 32 CACHE SRAM, 9.7 ns, PQFP100
32K x 32 1M Synchronous Burst SRAM 32K X 32 CACHE SRAM, 18 ns, PQFP100
32K x 32 1M Synchronous Burst SRAM 32K X 32 CACHE SRAM, 10 ns, PQFP100
32K x 32 1M Synchronous Burst SRAM
|
GSI Technology, Inc.
|
| BTS3118D |
Smart Lowside Power Switch
Smart Low Side Switches - 42V, 100mΩ, 2.4A, TO252
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| 24WC32 CAT24WC32 CAT24WC64 |
32K/64K-Bit I2C Serial CMOS E2PROM
32K/64K-BitI2CSerialCMOSE2PROM
|
CatalystSemiconductor
Catalyst Semiconductor
|
| 24AA65T-_SM 24LC65-I_P 24C65-E_P 24LC65T-I_SM 24C6 |
64K I2C?/a> Smart Serial?/a> EEPROM
64K I2C Smart Serial EEPROM
64K I2C垄芒 Smart Serial垄芒 EEPROM
|
Microchip Technology
|
| CAT24WC64GWETE13D CAT24WC64J-1.8TE13D CAT24WC32JI- |
4K X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
8K X 8 I2C/2-WIRE SERIAL EEPROM, PDIP8 0.300 INCH, PLASTIC, MS-001, DIP-8
4K X 8 I2C/2-WIRE SERIAL EEPROM, PDIP8 0.300 INCH, PLASTIC, MS-001, DIP-8
32K/64K-Bit I2C Serial CMOS EEPROM
32K/64K-Bit I2C Serial CMOS EEPROM
|
CATALYST[Catalyst Semiconductor]
http://
|
| NM24C32 NM24C32FN NM24C32FVM8 NM24C32FLVM8 NM24C32 |
I2C Serial EEPROM 4K X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
I2C Serial EEPROM 4K X 8 I2C/2-WIRE SERIAL EEPROM, PDIP8
32K-Bit Extended 2-Wire Bus Interface Serial EEPROM with Write Protect
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| GS70328TS-8IT GS7032 GS70328SJ GS70328SJ-10 GS7032 |
256K Async SRAMs
Aluminum Electrolytic Radial Leaded Bi-Polar Capacitor; Capacitance: 100uF; Voltage: 25V; Case Size: 8x11.5 mm; Packaging: Bulk
32K x 8 256Kb Asynchronous SRAM 32K的8 256Kb的异步SRAM
32K x 8 256Kb Asynchronous SRAM
|
GSI[GSI Technology]
Electronic Theatre Controls, Inc.
|
| 24C02SC-_WF08 24C01SC 24C01SC-_S 24C01SC-_S08 24C0 |
128 X 8 I2C/2-WIRE SERIAL EEPROM, UUC5
256 X 8 I2C/2-WIRE SERIAL EEPROM, UUC5
1K/2K 5.0V I2C Serial EEPROMs for Smart Cards
|
MICROCHIP[Microchip Technology]
|
| GM76C256CLLFW GM76C256CLL GM76C256C GM76C256CE GM7 |
32K x8 bit 5.0V Low Power CMOS slow SRAM
32K x8 bit 5.0V Low Power CMOS slow SRAM 32K的x8.0V低功耗CMOS SRAM的速度
32K X 8 STANDARD SRAM, 55 ns, PDSO28
|
Hynix Semiconductor, Inc.
HYNIX SEMICONDUCTOR INC
|
| X28HC256P-12 X28HC256P-15 X28HC256J-90 X28HC256S-1 |
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 150 ns, PDSO28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 120 ns, CPGA28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, CQCC32
SWITCH SLIDE 2MM HORIZONTAL SMD 32K X 8 EEPROM 5V, 90 ns, CDIP28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, CDIP28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, CDIP28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, PDIP28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, PDSO28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, PDSO28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, PDIP28
RACK DESK SOLID BLACK 1.75X19X8,1 32K X 8 EEPROM 5V, 70 ns, CPGA28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, PQCC32
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, CPGA28
Continuity Tester RoHS Compliant: NA 32K X 8 EEPROM 5V, 90 ns, PQCC32
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, PQCC32
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, CDFP28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, CQCC32
Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 1000uF; Voltage: 50V; Case Size: 12.5x25 mm; Packaging: Bulk
|
Intersil, Corp.
Intersil Corporation
|
|
